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K4T51163QGHCE6T
Industrial DDR2 SDRAM K4T51163QG 512Mb G-die DDR2 SDRAM Specification 84FBGA with Lead-Free and Halogen-Free (RoHS compliant) Industrial Temp. -40 to 95°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 of 44 Rev. 1.2 December 2008
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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