512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
SST27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories
Data Sheet
FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8
• 4.5-5.5V Read Operation
• Superior Reliability
– Endurance: At least 1000 Cycles
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical)
– Standby Current: 10 µA (typical)
• Fast Read Access Time
– 70 ns
• Fast Byte-Program Operation
– Byte-Program Time: 20 µs (typical)
– Chip Program Time:
1.4 seconds (typical) for SST27SF512
2.8 seconds (typical) for SST27SF010
5.6 seconds (typical) for SST27SF020
• Electrical Erase Using Programmer
– Does not require UV source
– Chip-Erase Time: 100 ms (typical)
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EPROM Pinouts
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP for SST27SF010/020
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST27SF512/010/020 are a 64K x8 / 128K x8 / 256K
x8 CMOS, Many-Time Programmable (MTP) low cost
flash, manufactured with SST’s proprietary, high performance SuperFlash technology. The split-gate cell design
and thick oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power supply. They have to be erased prior
to programming. These devices conform to JEDEC standard pinouts for byte-wide memories.
Device Operation
Featuring
high-performance
Byte-Program,
the
SST27SF512/010/020 provide a Byte-Program time of 20
µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an
endurance of at least 1000 cycles. Data retention is rated at
greater than 100 years.
Read
The SST27SF512/010/020 are suited for applications that
require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and
performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
To meet surface mount and conventional through hole
requirements, the SST27SF512 are offered in 32-lead
PLCC, 32-lead TSOP and 28-pin PDIP packages. The
,
SST27SF010/020 are offered in 32-pin PDIP 32-lead
,
PLCC, and 32-lead TSOP packages. See Figures 3, 4, and
5 for pin assignments.
©2008 Silicon Storage Technology, Inc.
S71152-12-000
9/08
1
The SST27SF512/010/020 are a low cost flash solution
that can be used to replace existing UV-EPROM, OTP,
and mask ROM sockets. These devices are functionally
(read and program) and pin compatible with industry
standard EPROM products. In addition to EPROM functionality, these devices also support electrical Erase
operation via an external programmer. They do not
require a UV source to erase, and therefore the packages do not have a window.
The Read operation of the SST27SF512/010/020 is controlled by CE# and OE#. Both CE# and OE# have to be low
for the system to obtain data from the outputs. Once the
address is stable, the address access time is equal to the
delay from CE# to output (TCE). Data is available at the output after a delay of TOE from the falling edge of OE#,
assuming that CE# pin has been low and the addresses
have been stable for at least TCE-TOE. When the CE# pin is
high, the chip is deselected and a typical standby current of
10 µA is consumed. OE# is the output control and is used
to gate data from the output pins. The data bus is in high
impedance state when either CE# or OE# is high.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MTP is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
