NAND04G-B2D, NAND08G-BxC
4 Gbit, 8 Gbit, 2112 byte/1056 word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
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High density NAND Flash Memory
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
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NAND interface
– x8 or 16x bus width
– Multiplexed address/data
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Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
LGA
Supply voltage: 1.8 V or 3.0 V device
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TSOP48 12 x 20 mm (N)
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Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
r
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Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
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ONFI 1.0 compliant command set
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Data integrity
– 100 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
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ECOPACK® packages
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
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LGA52 12 x 17 mm (ZL)
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Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
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Device Summary
Reference
Part number
NAND04GR3B2D
NAND04G-B2D
Cache read mode
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Table 1.
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
NAND04GW3B2D
NAND04GR4B2D(1)
NAND04GW4B2D(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08G-BxC
NAND08GR4B2C(1)
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Status Register
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Electronic signature
NAND08GR3B4C
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Chip Enable ‘don’t care’
NAND08GW3B4C
■
Serial number option
September 2007
NAND08GW4B2C(1)
1. x16 organization only available for MCP products.
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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