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HY27US08561ATPCB
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary 0.1 Renewal Product Group Dec. 08. 2003 Preliminary 0.2 Append 1.8V Operation Product to Data sheet Dec. 08. 2003 Preliminary 0.3 Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be Low or High. - Change the test condition of Stand-by current-Refer to Table 13. Change CSP Package name & thickness - Name : VFBGA -> FBGA - Thickness : 1.0mm(max) -> 1.2mm(max) Mar. 08. 2004 Preliminary 0.4 1) Delete Cache Program Mode 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) Jun. 01. 2004 Preliminary 0.5 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care Sep. 24. 2004 Preliminary Oct. 18. 2004 Preliminary 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 0.7 - Change TSOP1,WSOP1,FBGA mechanical data - Inches parameter has been excluded from the mechanical data table 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure Oct. 20. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.7 / Oct. 2004 1
HYNIX
2012年3月にSKハイニックスに社名変更した。
SKHYNIX
SK hynix Inc.
韓国
韓国内でサムスン電子に次いで2位の半導体メーカーである。 主力製品はDRAMとNAND型フラッシュメモリである。
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