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BC212B
MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 212 BC 213 BC 214 Unit Collector – Emitter Voltage VCEO –50 –30 –30 Vdc Collector – Base Voltage VCBO –60 –45 –45 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 3 °C/W Rating Operating and Storage Junction Temperature Range CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC212 BC213 BC214 V(BR)CEO –50 –30 –30 — — — — — — Vdc Collector – Base Breakdown Voltage (IC = –10 mA, IE = 0) BC212 BC213 BC214 V(BR)CBO –60 –45 –45 — — — — — — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) BC212 BC213 BC214 V(BR)EBO –5 –5 –5 — — — — — — Vdc Collector–Emitter Leakage Current (VCB = –30 V) BC212 BC213 BC214 ICBO — — — — — — –15 –15 –15 nAdc Emitter–Base Leakage Current (VEB = –4.0 V, IC = 0) BC212 BC213 BC214 IEBO — — — — — — –15 –15 –15 nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1
FAIRCHILD
Fairchild Semiconductor International, Inc
U.S.A
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