SSM3K7002F
TOSHIBA Field-Effect Transistor
Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
+0.5
2.5-0.3
Small package
2.9±0.2
: Ron = 3.2 Ω (max) (@VGS = 5 V)
: Ron = 3.0 Ω (max) (@VGS = 10 V)
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
± 20
V
DC
ID
200
Pulse
IDP
800
Drain power dissipation (Ta = 25°C)
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
3
Drain current
0~0.1
Symbol
2
+0.2
1.1-0.1
Characteristics
1
0.3
Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.4-0.05
+0.25
1.5-0.15
: Ron = 3.3 Ω (max) (@VGS = 4.5 V)
+0.1
0.16-0.06
Low ON-resistance
1.9
•
0.95 0.95
•
mA
1.Gate
2.Source
3.Drain
S-MINI
JEDEC
TO-236MOD
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1F
temperature, etc.) may cause this product to decrease in the
Weight: 12 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Typ
Max
Unit
VGS = ± 20 V, VDS = 0
⎯
⎯
± 10
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0
60
⎯
⎯
V
VDS = 60 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 10 V, ID = 0.25 mA
1.0
⎯
2.5
V
⎪Yfs⎪
VDS = 10 V, ID = 200 mA
170
⎯
⎯
mS
ID = 500 mA, VGS = 10 V
Drain-source breakdown voltage
Min
IDSS
Gate leakage current
Symbol
⎯
2.0
3.0
ID = 100 mA, VGS = 5 V
⎯
2.1
3.2
IGSS
RDS (ON)
Test Condition
ID = 100 mA, VGS = 4.5 V
Input capacitance
Crss
Output capacitance
Switching time
Turn-on delay time
td(on)
Turn-off delay time
td(off)
VDD = 30 V , ID = 200 mA ,
VGS = 0 to 10 V
1
2.2
3.3
17
⎯
pF
⎯
1.4
⎯
pF
⎯
Coss
VDS = 25 V, VGS = 0, f = 1 MHz
⎯
⎯
Ciss
Reverse transfer capacitance
Ω
5.8
⎯
pF
⎯
2.4
4.0
⎯
26
40
ns
2007-11-01