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2SK2201
2SK2201 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV) 2SK2201 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. : |Yfs| = 3.5 S (typ.) : IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic 1.1 ± 0.2 0.8 MAX. 0.6 MAX. 1.05 MAX. 0.6 ± 0.15 1 2 3 2.3 ± 0.2 Low leakage current Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V 2.3 ± 0.15 2.3 ± 0.15 Gate-source voltage VGSS ±20 V (Note 1) ID 3 A 1. 2. Pulse (Note 1) IDP 12 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 140 mJ Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 0.1 ± 0.1 High forward transfer admittance 5.5 ± 0.2 : RDS (ON) = 0.28 Ω (typ.) 1.2 MAX. Low drain-source ON-resistance 9.5 ± 0.3 4 V gate drive °C DC Drain current 2 GATE DRAIN （HEAT SINK） 3. SOURSE 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 Ω, IAR = 3 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-02-05
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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