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PHD78NQ03LT
PHD78NQ03LT N-channel TrenchMOS logic level FET Rev. 06 — 11 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources 1.3 Applications Computer motherboards DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 25 V ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 - - 75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 107 W VGS = 4.5 V; ID = 25 A; VDS = 12 V; Tj = 25 °C; see Figure 11; see Figure 12 - 4 - nC VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 - 7.65 9 mΩ Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance
PHILIPS
2006年8月フィリップス社が半導体部門を投資家グループに売却しKASLION Acquisition B.V.の名称で法人化。2010年5月 社名を現在のNXPセミコンダクターズN.V.に変更。
NXP
NXP Semiconductors
オランダ
高性能ミックスドシグナルICのほか、ディスクリートなどの汎用製品をグローバルに提供している。
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