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2SK1119
2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance Unit: mm : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 1000 V Drain−gate voltage (RGS = 20 kΩ) VDGR 1000 V Gate−source voltage VGSS ±20 V (Note 1) ID 4 Pulse (Note 1) IDP 12 Drain power dissipation (Tc = 25°C) PD 100 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current DC A JEDEC TO-220AB JEITA TOSHIBA SC-46 2-10P1B Weight: 2.0 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 1.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 83.3 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
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