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FDS6612A
FDS6612A tm Single N-Channel, Logic-Level, PowerTrench® MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V • Fast switching speed These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings Symbol 3 7 2 8 G S G S S S S S SO-8 4 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 1a) 8.4 A PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.0 – Continuous – Pulsed 40 EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) W 24 mJ –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6612A FDS6612A 13’’ 12mm 2500 units ©2007 Fairchild Semiconductor Corporation FDS6612A Rev D1 (W) ® ® ® FDS6612A Single N-Channel, Logic-Level, PowerTrench® MOSFET April 2007 VGS = 10V 2 ID, DRAIN CURRENT (A) 4.0V 30 6.0V 20 3.5V 10 3.0V 0 0.5 1 1.5 2 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 3 0 Figure 1. On-Region Characteristics. 1.6 30 40 ID = 4.2A 1.4 1.2 1 0.8 0.6 -25 20 ID, DRAIN CURRENT (A) 0.1 ID = 8.4A VGS = 10V -50 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 0.8 0 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 0.08 0.06 TA = 125oC 0.04 TA = 25oC 0.02 0 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 40 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) VGS = 3.5V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 30 20 TA = 125oC -55oC 10 VGS = 0V 10 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 25oC 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6612A Rev D1 (W) FDS6612A Single N-Channel, Logic-Level, PowerTrench® MOSFET Typical Characteristics
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