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FDS6680A
July 2012 FDS6680A Single N-Channel, Logic Level, PowerTrench® MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 12.5 A, 30 V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Ultra-low gate charge low RDS(ON) • High power and current handling capability DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings Symbol VDSS Ratings – Continuous V ±20 (Note 1a) – Pulsed Power Dissipation for Single Operation Units 30 Gate-Source Voltage Drain Current 1 o Parameter ID 2 TA=25 C unless otherwise noted Drain-Source Voltage VGSS 3 8 G S G S S S S S SO-8 4 7 D D D D 12.5 (Note 1a) 2.5 (Note 1b) PD 1.2 (Note 1c) TJ, TSTG A 50 Operating and Storage Junction Temperature Range W 1.0 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Case (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13’’ 12mm 2500 units ©2012 Fairchild Semiconductor Corporation FDS6680A Rev F2(W) FDS6680A November 2004 FDS6680A Typical Characteristics 50 2.2 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 4.5V 3.5V 30 20 10 3.0V 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.03 ID = 12.5A VGS = 10V ID = 6.2A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V 1.8 0.8 0 1.4 1.2 1 0.8 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 2 150 Figure 3. On-Resist ance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 2 40 30 TA = 125oC o -55 C 20 10 25oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6680A Rev F2(W)
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