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FDS6688
FDS6688 30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V • Ultra-low gate charge (40 nC typical) Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • High power and current handling capability DD D D 5 6 G S G S S S S S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 3 2 8 D D 4 7 D D 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 16 A – Continuous (Note 1a) – Pulsed 50 Power Dissipation for Single Operation 2.5 1.4 (Note 1c) TJ, TSTG (Note 1a) (Note 1b) PD 1.2 Operating and Storage Junction Temperature Range W –55 to +175 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6688 FDS6688 13’’ 12mm 2500 units ©2004 Fairchild Semiconductor Corporation FDS6688 Rev D(W) FDS6688 January 2004 FDS6688 Typical Characteristics 50 2.2 ID, DRAIN CURRENT (A) 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 40 3.5V 3.0V 30 20 10 0 2 VGS = 3.0V 1.8 1.6 3.5V 1.4 4.0V 1.2 4.5V 6.0V 10V 1 0.8 0 0.25 0.5 0.75 1 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 0.014 ID = 16A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 ID = 8A 0.011 TA = 125oC 0.008 0.005 TA = 25oC 0.002 -50 -25 0 25 50 75 100 125 150 2 175 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 150 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) 120 90 60 TA =125oC 30 25oC -55oC VGS = 0V 10 TA = 125oC 1 0.1 25oC 0.01 -55oC 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6688 Rev D(W)
FAIRCHILD
Fairchild Semiconductor International, Inc
U.S.A
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