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FDS6690A
FDS6690A tm Single N-Channel, Logic-Level, PowerTrench® MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V • Fast switching speed These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D DD D D 5 6 Pin 1 SO-8 Absolute Maximum Ratings Symbol 3 7 2 8 G S G S S S S S SO-8 4 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 1a) 11 A PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.0 – Continuous – Pulsed 50 EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) W 96 mJ –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690A FDS6690A 13’’ 12mm 2500 units ©2007 Fairchild Semiconductor Corporation FDS6690A Rev E1 (W) FDS6690A February 2007 FDS6690A Typical Characteristics 50 3 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 3.5.V 4.5V 30 20 3.0V 10 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 1.5 4.0V 4.5V 6.0V 10V 1 0 2 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.05 ID = 11.0A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.5 0 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = 5.5A 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 0 175 2 Figure 3. On-Resistance Variation with Temperature. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 30 20 o TA = 125 C 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 ID, DRAIN CURRENT (A) VGS = 3.0V 2.5 o 25 C 10 o -55 C VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 0.01 o -55 C 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6690A Rev E1 (W)
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