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FDS6990A
FDS6990A Dual N-Channel Logic Level PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 7.5 A, 30 V. RDS(ON) = 18 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1 D1 D D2 D 5 D2 D 6 4 3 Q1 7 SO-8 Pin 1 SO-8 G2 S2 S 8 S 2 Q2 1 S Absolute Maximum Ratings Symbol G1 S1 G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 7.5 A – Continuous (Note 1a) – Pulsed PD 20 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, TSTG W 0.9 –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990A FDS6990A 13’’ 12mm 2500 units ©2003 Fairchild Semiconductor Corporation FDS6990A Rev D(W) FDS6990A June 2003 FDS6990A Typical Characteristics 20 2 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10.0V 16 4.5V 4.0V 12 3.0V 8 4 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 4.0V 4.5V 1.2 5.0V 6.0V 1 2 10.0V 0 Figure 1. On-Region Characteristics. 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 1.6 ID = 7.5A VGS = 10.0V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V 1.6 0.8 0 1.4 1.2 1 0.8 0.6 ID = 3.75A 0.04 0.03 TA = 125oC 0.02 TA = 25oC 0.01 0 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) 1.8 12 TA = 125oC 25oC 8 o -55 C 4 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6990A Rev D(W)
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