DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52418
L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER
NPN GaAs HBT
DESCRIPTION
The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile
communication equipment.
FEATURES
• Ideal for low noise and high gain amplifiers
NF = 0.95 dB TYP., Ga = 17 dB TYP. (@ VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZL = 50 Ω)
IIP3 = +8 dBm TYP. (@ VCE = 2.5 V, IC = 8 mA, f = 2 GHz, 1 tone, ZS = ZL = Zopt)
• 4-pin super minimold package employed (SOT-343 style)
• Grounded emitter transistor
APPLICATIONS
• Mobile communication terminals and other L to S band microwave communication applications
ORDERING INFORMATION
Part Number
NE52418-T1
Package
4-pin super minimold
Marking
Supplying Form
V45
• 8 mm wide embossed taping
• Pin 3 (Emitter), Pin 4 (Collector) face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE52418
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15641EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001
