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2SK3018T106
2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit : mm) Structure Silicon N-channel MOSFET UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (1) (2) 0.1Min. Applications Interfacing, switching (30V, 100mA) 2.1 (3) 0.65 0.65 1.3 (1) Source Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Each lead has same dimensions (2) Gate Abbreviated symbol : KN (3) Drain Packaging specifications Package Equivalent circuit Taping Code Drain T106 Basic ordering unit (pieces) Type 0.15 3000 2SK3018 Gate ∗ Gate Absolute maximum ratings (Ta=25°C) Symbol Limits Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Protection Diode Unit V Parameter Continuous ±100 Pulsed Drain current ID IDP∗1 ±400 200 ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. mA PD∗2 Source mW Total power dissipation mA Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Thermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 625 °C / W ∗ With each pin mounted on the recommended lands. Rev.B 1/3 2SK3018 Transistor 0.5 VDS=3V Pulsed 0.2 7 ID=100mA 6 ID=50mA 5 4 3 2 Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 25 50 75 100 125 150 50 CAPACITANCE : C (pF) 20m 0V VGS=4V 5m 2m 5m 2m 1m 0.5m 0.2m 0.1m 0 1m 0.5m 10 Coss Crss 2 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Ciss 5 Ta=125°C 75°C 25°C −25°C 10m 0.5 Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 1000 Ta=25°C f=1MHZ VGS=0V 20 50m 10m 50m Fig.8 Forward transfer admittance vs. drain current Ta=25°C Pulsed 100m 0.05 0.1 0.2 0.005 0.01 0.02 VGS=0V Pulsed 20m DRAIN CURRENT : ID (A) Fig.7 Static drain-source on-state resistance vs. channel temperature 200m 0.0005 0.001 0.002 200m 100m 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITCHING TIME : t (ns) 0 CHANNEL TEMPERATURE : Tch (°C) REVERSE DRAIN CURRENT : IDR (A) REVERSE DRAIN CURRENT : IDR (A) VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 8 td(off) 200 100 50 20 tr td(on) 10 5 0.2m 0.5 0.1 0.1m 0 0.5 1 1.5 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Switching characteristics measurement circuit Pulse width VGS RG VGS ID D.U.T. VDS RL 50% 10% VDS VDD 10% 90% 90% tr td(on) ton Fig.13 Switching time measurement circuit 90% 50% 10% td(off) tf toff Fig.14 Switching time waveforms Rev.B 3/3
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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