2SJ465
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)
2SJ465
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
2.5-V gate drive
Low drain−source ON-resistance
: RDS (ON) = 0.54 Ω (typ.)
High forward transfer admittance : |Yfs| = 1.7 S (typ.)
Low leakage current : IDSS = −100 μA (max) (VDS = −16 V)
Enhancement mode : Vth = −0.5 to −1.1 V
(VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−16
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−16
V
Gate−source voltage
VGSS
±8
V
(Note 1)
ID
−2
Pulse (Note 1)
IDP
−6
PD
0.5
W
PD
1.5
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
Drain power dissipation
Drain power dissipation
(Note 2)
A
JEDEC
―
JEITA
―
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
Max
Unit
Rth (ch−a)
250
°C / W
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-12-10
2SJ465
3
2009-12-10
