HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE
Unit: mm
Audio Frequency General Purpose Amplifier Applications
Q1:
High voltage and high current
: VCEO = 50V, IC = 150mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2:
High voltage and high current
: VCEO = −50V, IC = −150mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1G
Weight: 3.0mg (typ.)
Marking
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
6
Symbol
Rating
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−150
mA
Base current
IB
−30
5
4
hFE Rank
Unit
Collector-base voltage
Type Name
mA
1D
1
2
3
Equivalent Circuit (Top View)
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
100
mW
Tj
150
−55~150
4
°C
Tstg
5
Unit
PC*
6
°C
Q1
Q2
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2007-11-01
