FS70SM-2
High-Speed Switching Use
Nch Power MOS FET
REJ03G1431-0200
(Previous: MEJ02G0110-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 10 V
VDSS : 100 V
rDS(ON) (max) : 20 mΩ
ID : 70 A
Integrated Fast Recovery Diode (TYP.) : 120 ns
Outline
RENESAS Package code: PRSS0004ZB-A
(Package name: TO-3P)
2, 4
4
1.
2.
3.
4.
1
1
2
3
Gate
Drain
Source
Drain
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Symbol
Ratings
Unit
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
100
±20
70
280
70
70
280
150
– 55 to +150
– 55 to +150
4.8
V
V
A
A
A
A
A
W
°C
°C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.2.00
Aug 07, 2006
page 1 of 6
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
