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P600G
P600A, P600B, P600D, P600G, P600J, P600K, P600M www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward current capability • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 P600 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM Case: P600, void-free molded epoxy body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 400 A VF MECHANICAL DATA 0.9 V, 1.0 V IR 5.0 μA TJ max. 150 °C Package P600 Diode variations Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL P600A P600B P600D P600G P600J P600K P600M UNIT Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Max. DC blocking voltage Max. average forward rectified current at TA = 60 °C, 0.375" (9.5 mm) lead length (fig. 1) TL = 60 °C, 0.125" (3.18 mm) lead length (fig. 2) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range 6.0 IF(AV) A 22 IFSM 400 A TJ, TSTG - 50 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Max. instantaneous forward voltage 6.0 A Max. DC reverse current at rated DC blocking voltage SYMBOL VF 100 A TA = 25 °C TA =100 °C IR P600A P600B P600D P600G P600J P600K P600M UNIT 0.90 1.0 1.30 1.4 V 5.0 μA 1.0 mA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.5 μs Typical junction capacitance 4.0 V, 1 MHz CJ 150 pF Revision: 13-Aug-13 Document Number: 88692 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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