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TC74VHC00F-EL
TC74VHC00F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC00F,TC74VHC00FT,TC74VHC00FK Quad 2-Input NAND Gate TC74VHC00F The TC74VHC00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. TC74VHC00FT Features • High speed: tpd = 3.7 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • • Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼ tpHL − • Wide operating voltage range: VCC (opr) = 2 to 5.5 V • Low noise: VOLP = 0.8 V (max) • Pin and function compatible with 74ALS00 TC74VHC00FK Weight SOP14-P-300-1.27A TSSOP14-P-0044-0.65A VSSOP14-P-0030-0.50 1 : 0.18 g (typ.) : 0.06 g (typ.) : 0.02 g (typ.) 2012-02-29 TC74VHC00F/FT/FK Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0 to 5.5 V Input voltage VIN 0 to 5.5 V VOUT 0 to VCC V −40 to 85 °C Output voltage Operating temperature Topr Input rise and fall time Note: 0 to 100 (VCC = 3.3 ± 0.3 V) dt/dv ns/V 0 to 20 (VCC = 5 ± 0.5 V) The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Characteristics Test Condition Symbol Ta = −40 to 85°C Ta = 25°C VCC (V) Min 2.0 1.50 3.0 to 5.5 VCC × 0.7 ― ― ― 3.0 to 5.5 ― ― VCC × 0.3 ― VCC × 0.3 2.0 1.9 2.0 ― 1.9 3.0 2.9 3.0 ― 2.9 ― 4.5 4.4 4.5 ― 4.4 ― IOH = −4 mA 3.0 2.58 ― ― 2.48 ― IOH = −8 mA 4.5 3.94 ― ― 3.80 ― 2.0 ― 0.0 0.1 ― 0.1 3.0 ― 0.0 0.1 ― 0.1 VIH ― Low-level input voltage VIL ― 2.0 IOH = −50 μA High-level output voltage VOH VIN = VIH or VIL IOL = 50 μA Low-level output voltage VOL Unit ― High-level input voltage VIN = VIH Typ. Max ― ― ― 0.50 Min 1.50 VCC × 0.7 ― Max ― ― V 0.50 4.5 ― 0.0 0.1 ― 0.1 IOL = 4 mA 3.0 ― ― 0.36 ― 4.5 ― ― 0.36 ― V V 0.44 IOL = 8 mA V 0.44 Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ― ― 2.0 ― 20.0 μA 3 2012-02-29
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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