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MP4020

製品説明
仕様・特性

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 10 pins) • High collector power dissipation (4-device operation) • Unit: mm High collector current: IC (DC) = 2 A (max) : PT = 4 W (Ta = 25°C) • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V DC IC 2 Pulse ICP 3 IB 0.5 A PC 2.0 W PT 4.0 W Tj 150 °C Tstg −55 to 150 °C Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range ― JEITA A JEDEC ― TOSHIBA 2-25A1A Weight: 2.1 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 3 5 4 2 7 6 9 8 10 1 R1 R2 R1 ≈ 5 kΩ R2 ≈ 300 Ω 1 2006-10-27

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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