HOME>在庫検索>在庫情報
DNA1002D
Pr el im in GPF1001 THRU GPF1007 ar y Isolation 10.0 AMPS. Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Current 10.0 Amperes ITO-220AB Features a a a a .185(4.7) MAX Low forward voltage drop High current capability High reliability High surge current capability .406(10.3)MAX .124(3.16) MAX .134(3.4)DIA .113(3.0)DIA .112(2.85) .100(2.55) .272(6.9) .248(6.3) .606(15.5) .583(14.8) Mechanical Data a a a a a a a Cases: ITO-220AB molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Leads solderable per MIL-STDTerminals: 202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 250°C/ 0.25” (6.35mm) from case 10 seconds Mounting torque: 5 in – 1bs max. Weight: 2.24 grams .161(4.1) MAX .110(2.8) .098(2.5) .055(1.4) MAX .030(0.76) MAX .035(0.9) MAX .100(2.55) .543(13.8) .512(13.2) .100(2.55) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% GPF GPF GPF Type Number 1001 1002 1003 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage 50 35 50 100 70 100 Maximum Average Forward Rectified Current @TC = 100°C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @5.0A Maximum DC Reverse Current @ TC=25°C at Rated DC Blocking Voltage @ TC=125°C 200 140 200 GPF 1004 GPF 1005 GPF 1006 GPF Units 1007 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V 10.0 125 Operating and Storage Temperature Range TJ,TSTG V 5.0 100 30 5.0 - 65 to + 150 Typical Thermal Resistance RÛJC (Note 2) A 1.1 Typical Junction Capacitance ( Note 1) A uA uA pF °C/W °C Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. Notes: 2. Thermal Resistance from Junction to Case per Leg Mounted on Heatsink. - 328 -
HITACHI
NECエレクトロニクスは平成14年にNECから、ルネサスは平成15年に日立製作所及び三菱電機からそれぞれ分離独立する形で設立された半導体専業企業であり両者は合併した。
RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年(平成22年)4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ&ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。