Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0885
purpose 50 Ω gain block above
0.5 GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial and industrial applications.
Features
• Usable Gain to 6.0 GHz
• High Gain:
32.5 dB Typical at 0.1 GHz
22.5 dB Typical at 1.0 GHz
• Low Noise Figure:
3.3 dB Typical at 1.0 GHz
• Low Cost Plastic Package
Description
The MSA-0885 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
The MSA-series is fabricated using
HP’s 10 GHz fT, 25 GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9545E
OUT
MSA
Vd = 7.8 V
6-422
85 Plastic Package
