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SUM110N10-09-E3
SUM110N10-09 Vishay Siliconix N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM110N10-09-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current ID IDM Avalanche Current L = 0.1 mH TC = 25 °C Maximum Power Dissipationb TA = 25 °C Operating Junction and Storage Temperature Range V 110a 87a 440 IAR Repetitive Avalanche Energyb Unit 75 EAR 280 A PD 375c 3.75 mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)d Junction-to-Case (Drain) °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70677 S10-0644-Rev. G, 22-Mar-10 www.vishay.com 1
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