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部品型式

CY7C1061DV33-10ZSXI

製品説明
仕様・特性

CY7C1061DV33 16-Mbit (1 M × 16) Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description ■ High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 54-pin TSOP II and 48-ball VFBGA packages ■ Offered in single CE and dual CE options To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. See Truth Table on page 12 for a complete description of Read and Write modes. The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE1 HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW). The CY7C1061DV33 is available in a 54-pin TSOP II package with center power and ground (revolutionary) pinout, and 48-ball VFBGA packages. For a complete list of related documentation, click here. Logic Block Diagram SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER INPUT BUFFER 1M x 16 ARRAY I/O0 – I/O7 I/O8 – I/O15 A10 A11 A 12 A 13 A 14 A15 A16 A17 A18 A19 COLUMN DECODER BHE WE OE BLE Cypress Semiconductor Corporation Document Number: 38-05476 Rev. *J • 198 Champion Court • CE2 CE1 San Jose, CA 95134-1709 • 408-943-2600 Revised October 27, 2015

ブランド

CYPRESS

会社名

Cypress Semiconductor

本社国名

U.S.A

事業概要

主力製品は、NOR型フラッシュ・メモリ、F-RAMおよびSRAM Traveoマイクロコントローラ、業界唯一のPSoCソリューション、アナログ回路、PMIC、CapSense capacitive touch-sensingコントローラ、Wireless BLE Bluetooth Low-Energy、そしてUSB connectivityソリューションである。 2015年にスパンション社と合併し、フラッシュメモリ、マイクロコントローラ、ミックスドシグナル製品およびアナログ製品も強化も行っています。

供給状況

 
Not pic File
データシート
pdf

提携先在庫情報

型式 数量 D/C・lead 備考 選択
CY7C1061DV3310ZSXI 333個    
CY7C1061DV3310ZSXI 17個    
CY7C1061DV33-10ZSXIを取扱っています。

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