DBA500G
Ordering number : ENA0699A
SANYO Semiconductors
DATA SHEET
DBA500G
Diffused Junction Silicon Diode
50A Single-Phase Bridge Rectifier
Features
•
•
•
Plastic molded structure
Peak reverse voltage : VRM=600V
Average output current : IO=50A
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Current Squared Time
Symbol
VRM
IO
Conditions
Ratings
Unit
V
50Hz sine 1cycle peak value, Tc=95°C, with heatsink
50
A
50Hz sine wave, non-repetitive, 1cycle peak value, Tj=25°C
500
A
1ms≤t<10ms, Tj=25°C, Rating of per diode
800
A2s
150
IFSM
I 2t
600
°C
Junction Temperature
Tj
Storage Temperature
Tstg
Dilective Strength Voltage
Vdis
Terminals tc case, AC 1 minute
Tightening Torque
TOR
( ): recommended value
--40 to +150
°C
2
kV
0.8(0.6)
N•m
Electrical Characteristics at Tc=25°C Per Constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thremal Resistance
Symbol
VF
IR
Rth(j-c)
Ratings
Conditions
min
IF=25A
VR=600V
With heatsink (Junction-Case)
typ
max
Unit
1.05
V
10
μA
0.5
°C / W
Marking: BA500G
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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70710 TK IM / 62007RB TI IM TC-00000624 No. A0699-1/3