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2SJ377
2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V Gate−source voltage VGSS ±20 V ID −5 A IDP −20 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 273 mJ Avalanche current IAR −5 A Repetitive avalanche energy (Note 3) EAR 2 mJ Drain current DC (Note 1) Pulse (Note 1) JEDEC ― JEITA Channel temperature Tch 150 Tstg −55~150 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) °C Storage temperature range SC-64 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W JEDEC ― JEITA Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16
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