Transys
Electronics
L I M I T E D
TO-92L Plastic-Encapsulate Transistors
2SC1383
2SC1384
TRANSISTOR (NPN)
TO-92L
FEATURE
Power dissipation
PCM:
Collector current
ICM:
Collector-base voltage
V(BR)CBO:
1. EMITTER
1
W (Tamb=25℃)
2. COLLECTOR
3. BASE
1
A
2SC1383:
30
V
2SC1384:
50
V
Operating and storage junction temperature range
123
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Collector-base breakdown voltage
2SC1383
Test
conditions
MIN
MAX
30
UNIT
V(BR)CBO
Ic= 10µA , IE=0
V(BR)CEO
IC=2mA , IB=0
V(BR)EBO
IE= 10µA, IC=0
ICBO
VCB=20V , IE=0
hFE(1)
VCE=10 V, IC= 500mA
85
hFE(2)
VCE=5 V, IC= 1A
50
Collector-emitter saturation voltage
VCE(sat)
IC= 500m A, IB=50mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC= 500mA , IB= 50mA
1.2
V
fT
VCE= 10 V, IC= 50mA
2SC1384
Collector-emitter breakdown voltage
2SC1383
2SC1384
Emitter-base breakdown voltage
Collector cut-off current
V
50
25
V
50
5
V
0.1
µA
340
DC current gain
Transition frequency
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
Q
R
S
85-170
120-240
170-340
