NANDxxGW3F2A
8-Gbit, 16-Gbit, 4224-byte page,
3 V supply, single level, multiplane, NAND flash memory
Preliminary Data
Features
■
High density NAND flash memory
– 8, 16 Gbits of memory array
– Cost-effective solutions for mass storage
applications
■
NAND interface
– x8 bus width
– Multiplexed address/data
■
Supply voltage: VDD = 2.7 to 3.6 V
■
Page size: (4096 + 128 spare) bytes
■
Block size: (256K + 8K spare) bytes
■
Multiplane architecture
– Array split into two independent planes
– All operations can be performed on both
planes simultaneously
TSOP48 12 x 20 mm (N)
■
Page read/program
– Random access: 60 µs (max)
– Sequential access: 25 ns (min)
– Page program operation time: 200 µs (typ)
■
Copy-back program
– Automatic block download without latency
time
Data protection
– Hardware program/erase locked during
power transitions
■
Security features
– OTP area
– Serial number option
■
Development tools
– Error correction code models
– Bad block management and wear leveling
algorithm
– HW simulation models
■
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
■
ECOPACK® packages available
Multipage program time (2 pages): 200 µs (typ)
■
■
■
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
■
Status register
■
Electronic signature
■
Chip enable ‘don’t care’
October 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.numonyx.com
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