TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Lead-Free
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random
access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate
process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit
technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle
time of 45 ns. It is automatically placed in low-power mode at 0.6 μA standby current (at VDD = 3 V, Ta = 25°C,
typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1
and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory
access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM316B, TC55VEM316B,
TC55YCM316B and TC55YEM316B can be used in environments exhibiting extreme temperature conditions. The
TC55VCM316BTGN/BSGN, TC55YCM316BTGN/BSGN is available in a plastic 48-pin thin-small-outline package
(TSOP). The TC55VEM316BXGN, TC55YEM316BXGN is available in a plastic 48-ball BGA.
FEATURES
•
•
•
•
Low-power dissipation
Operating: 6 mW/MHz (typical)
Power down features using CE1 and CE2
Wide operating temperature range of −40° to 85°C
Lead-Free
Part Number
Operating
Supply
Voltage
TC55VCM316BTGN55
TC55VCM316BSGN55
TC55YCM316BTGN70
Supply
Voltage
2.3~3.6 V
45 ns
55 ns
55 ns
55 ns
70 ns
45 ns
55 ns
55 ns
Operating
Supply
Voltage
At Data
Retention
70 ns
45 ns
Supply Current
55 ns
70 ns
48-ball BGA
(6×7mm) (0.75mm ball pitch)
TC55VEM316BXGN55
TC55YCM316BTGN55
Supply
Voltage
2.7~3.6 V
48-pin Plastic TSOP(I)
2.3~3.6 V (12×14mm) (0.5mm pin pitch)
(Normal bent)
TC55VEM316BXGN45
Part Number
Package
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
TC55VCM316BTGN45
TC55VCM316BSGN45
Access time
(MAX)
At
At
Operating Standby
(MAX)
(MAX)
20 mA
Access time
(MAX)
Package
Supply
Voltage
1.8~2.2 V
Supply
Voltage
1.65~2.2 V
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
55 ns
1.5~3.6 V
Supply Current
At Data
Retention
70 ns
70 ns
10 μA
85 ns
48-pin Plastic TSOP(I)
1.65~2.2 V (12×14mm) (0.5mm pin pitch)
(Normal bent)
TC55YCM316BSGN70
55 ns
70 ns
70 ns
85 ns
TC55YEM316BXGN55
55 ns
70 ns
70 ns
At
At
Operating Standby
(MAX)
(MAX)
85 ns
TC55YCM316BSGN55
TC55YEM316BXGN70
48-ball BGA
(6×7mm) (0.75mm ball pitch)
12 mA
10 μA
1.0~2.2 V
2005-08-11
1/18