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ZC820
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance (pF) 100 ABSOLUTE MAXIMUM RATINGS. PARAMETER Reverse Voltage 10 10 Reverse Voltage (Volts) Diode Capacitance 25 V IF 200 mA Ptot 300 mW Tj 125 °C Storage Temperature Range Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb =25°C) 1 1 VR Junction Temperature 821 820 UNIT Power Dissipation at Tamb=25°C 824 823 822 MAX Forward Current 826 825 SYMBOL 100 PARAMETER SYMBOL MIN Reverse Voltage Leakage MAX UNIT CONDITIONS 0.02 IR Temperature Coefficient of Capacitance TYP η 0.03 µA 0.04 %/°C VR=3V TUNING CHARACTERISTICS (at Tamb =25°C) PART NO Nominal Capacitance in pF @ VR=2V, f=1MHz Minimum Q @ VR=3V f=50MHz Capacitance Ratio C2 /C20, at f=1MHz MIN NOM MAX 8 10 12 ZC821 12 15 18 300 5 6.5 ZC822 17.6 22 26.4 200 5 6.5 ZC823 26.4 33 39.6 200 5 6.5 ZC824 37.6 47 56.4 200 5 6.5 ZC825 54.4 68 81.6 100 5 6.5 ZC826 80 100 120 100 5 6.5 ZC820 300 *Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B 3-108 3-107 MIN MAX 5 6.5
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