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KSC5
KSC5803 KSC5803 High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor(85KHz) TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 IC Collector Current (DC) 12 V A ICP Collector Current (Pulse) 24 A PC Collector Dissipation (TC=25°C) 70 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 1400V, VBE=0 Min. Typ. Max. 1 Units mA ICBO Collector Cut-off Current VCE= 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 1 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 2A 3 VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 2A 1.5 V tSTG Storage Time 4 µs tF Fall Time VCC = 200V, IC = 7A IB1 = 1.4A, IB2= - 2.8A RL = 28.6Ω 0.3 µs ©2000 Fairchild Semiconductor International 15 5.5 40 8.5 V Rev. A, February 2000
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