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RefTitle1 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european directive PowerFLATTM (5 mm x 5 mm) Description The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™. Table 1. Figure 1. Pin connection Device summary Order code Marking Package Packing PD84008L-E 84008 PowerFLATTM Tape and reel February 2011 Doc ID 14228 Rev 3 1/14 www.st.com 14
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