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2SJ477-01MR
2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy *1 Maximum power dissipation(Tc=25°C) Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV PD Tch Tstg Rating -60 ±25 ±100 ±20 519.8 40 +150 -55 to +150 Equivalent circuit schematic Unit V A A V mJ W °C °C Drain(D) Gate(G) Source(S) *1 L=1.11mH, Vcc= -24V Electrical characteristics (Tc =25°C unless otherwise specified) Zero gate voltage drain current Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS= -60V VGS=0V VGS=±20V VDS=0V ID= -12.5A Min. -60 -1.0 Tch=25°C Tch=125°C VGS= -4V VGS= -10V ID=12.5A VDS= -25V VDS= -25V VGS=0V f=1MHz VCC= -30V RG=10 Ω ID= -25A VGS= -10V L=100μH Tch=25°C 7.5 Typ. Max. -1.5 -10 -0.2 10 80 45 15.0 2000 700 450 15 80 190 90 -2.5 -500 -1.0 100 110 60 3000 1050 680 25 120 290 140 -25 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/μs Tch=25°C -2 160 0.9 -3 Units V V μA mA nA mΩ mΩ S pF ns A V ns μC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 3.125 62.5 Units °C/W °C/W 1
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