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BC847A
BC846 thru BC849 Small Signal Transistors (NPN) TO-236AB (SOT-23) Mounting Pad Layout .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) .016 (0.4) Dimensions in inches and (millimeters) Type .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .102 (2.6) .094 (2.4) Type Marking BC846A B BC848A B C 1E 1F 1G 1J 1K 1L BC849B C 1A 1B BC847A B C Marking 2B 2C Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage BC846 BC847 BC848, BC849 VCBO 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCES 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCEO 65 45 30 V Emitter-Base Voltage BC846, BC847 BC848, BC849 VEBO 6 5 V IC 100 mA ICM 200 mA IBM 200 mA –IEM 200 mA Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50°C Ptot (1) mW (1) 310 Thermal Resistance Junction to Ambiant Air RθJA 450 °C/W Thermal Resistance Junction to Substrate Backside RθSB 320(1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on fiberglass substrate, see layout on third page. 10/2/01
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