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BZT03C68
BZT03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 949539 Applications • Medium power voltage regulators and medium power transient suppression circuits Mechanical Data Case: SOD-57 Weight: approx. 369 mg Packaging codes/options: TAP / 5 k ammopack (52 mm tape) / 25 k/box TR / 5 k 10" reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Value Unit PV 3.25 W Tamb = 25 °C PV 1.3 W PZRM Power dissipation Symbol l = 10 mm, TL = 25 °C 10 W PZSM 600 W Repetitive peak reverse power dissipation Non repetitive peak surge power dissipation tp = 100 μs, Tj = 25 °C Tj 175 °C Tstg - 65 to + 175 °C Junction temperature Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition Symbol Value Unit l = 10 mm, TL = constant RthJA 46 K/W On PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85599 Rev. 1.5, 26-Aug-10 Test condition Symbol IF = 0.5 A VF Min. Typ. For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Max. Unit 1.2 V www.vishay.com 1
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