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BYV26E
BYV26DGP and BYV26EGP Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Ultrafast Rectifier Reverse Voltage 800 to 1000V Forward Current 1.0A DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) Dia. 1.0 (25.4) min. Features ted* ten Pa 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia. ® 1.0 (25.4) min. Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306. • High temperature metallurgically bonded construction • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • Cavity-free glass passivated junction • Ultrafast recovery time for high efficiency • Low forward voltage, high current capability • Capable of meeting environmental standards of MIL-S-19500 • Low leakage current • High surge current capability • Specified reverse surge capability • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data Case: JEDEC DO-204AC, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol BYV26DGP BYV26EGP Unit Maximum repetitive peak reverse voltage VRRM 800 1000 V Maximum RMS voltage VRMS 560 700 V Maximum DC blocking voltage VDC 800 1000 V Maximum average forward rectified current 0.375" (9.5mm) lead length (See Fig. 1) IF(AV) 1.0 A Peak forward surge current 10ms single half sine-wave superimposed on rated load IFSM 30 A Non repetitive peak reverse energy ERSM 10 mj RΘJA RΘJL 70 16 °C/W TJ, TSTG –65 to +175 °C Typical thermal resistance (Note 1) (Note 2,3) Operating junction and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Minimum avalanche breakdown voltage at 100µA VBR 900 1100 V Maximum instantaneous forward voltage at 1.0A TJ = 25°C TJ = 175°C VF 2.5 1.3 V Maximum DC reverse current at rated DC blocking voltage TA = 25°C TA = 165°C IR 5.0 150 µA Max. reverse recovery time at IF=0.5A, IR =1.0A, Irr=0.25A trr 75 ns Typical junction capacitance at 4.0V, 1MHz CJ 15 pF Notes: (1) Peak reverse energy measured at IR = 400mA, TJ = TJ max. on inductive load, t = 20µs (2) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads (3) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink Document Number 88554 07-Mar-02 www.vishay.com 1
MICRON
Micron Technology
U.S.A
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