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7460
Si7460DP Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0096 at VGS = 10 V 18 0.012 at VGS = 4.5 V 60 16 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free) Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipation Steady State 60 ± 20 11 8 40 18 14 4.3 PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A 1.6 IAS EAS TA = 25 °C TA = 70 °C a ID 10 s 50 125 mJ 5.4 3.4 1.9 1.2 - 55 to 150 Soldering Recommendations (Peak Temperature)b,c 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72126 S09-0227-Rev. D, 09-Feb-09 www.vishay.com 1
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