TJ120F06J3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
TJ120F06J3
Chopper Regulator, DC-DC Converter Applications
Motor Drive Applications
•
High forward transfer admittance: |Yfs| = 110 S (typ.)
•
Low leakage current: IDSS = −10 μA (max) (VDS = −60 V)
•
Enhancement-model: Vth = −1.5 to −3.0 V (VDS = −10 V, ID = −1 mA)
0.4 ± 0.1
1.1
0.76 ± 0.1
1.4 ± 0.1
Drain-source voltage
VDSS
−60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−60
VGSS
±20
V
2 3
V
Gate-source voltage
1
0.4 ± 0.1
3.5 ± 0.2
Unit
2.76
Rating
0.1 ± 0.1
Symbol
2.34 ± 0.25
1.
2.
GATE
DRAIN
（HEAT SINK）
3. SOURSE
6.8
Characteristics
2.35 ± 0.1
2.54 ± 0.25
Absolute Maximum Ratings (Ta = 25°C)
3.0 ± 0.2
Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
10.0 ± 0.3
•
1.6
10.0 ± 0.3
9.5 ± 0.2
1.0 ± 0.3
Unit: mm
DC
(Note 1)
ID
−120
Pulse
(Note 1)
IDP
−360
Drain power dissipation (Tc = 25°C)
PD
300
W
JEDEC
⎯
Single pulse avalanche energy
(Note 2)
EAS
608
mJ
JEITA
⎯
Avalanche current
IAR
−120
A
Repetitive avalanche energy (Note 3)
EAR
30
mJ
Channel temperature (Note 4)
Tch
175
°C
Storage temperature range (Note 4)
Tstg
−55 to 175
°C
Drain current
A
8.0
TOSHIBA
Weight: 1.07 g (typ.)
Thermal resistance, channel to case
2
1
Thermal Characteristics
Characteristics
2-10W1A
Symbol
Max
Unit
Rth (ch-c)
0.5
°C/W
3
Note 1: Please use devises on condition that the channel temperature is below 175°C.
Note 2: VDD = −25 V, Tch = 25°C (Initial), L = 57 μH, RG = 25 Ω, IAR = −120 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on
AEC-Q101.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
1
2009-04-17
